32. Tac. Germ. 19
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چکیده
منابع مشابه
ISSCC 2009 / SESSION 19 / ANALOG TECHNIQUES / 19 . 6 19 . 6 A sub - 1 V Bandgap Voltage Reference in 32 nm FinFET Technology
The bulk CMOS technology is expected to scale down to about 32nm node and likely the successor would be the FinFET. The FinFET is an ultra-thin body multi-gate MOS transistor with among other characteristics a much higher voltage gain compared to a conventional bulk MOS transistor [1]. Bandgap reference circuits cannot be directly ported from bulk CMOS technologies to SOI FinFET technologies, b...
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ERSS 2008 attempted to rectify certain issues of ERSS 2007. The improvements to readability, however, do not reflect in significant score increases, and in fact the system fell in overall ranking. While we have not concluded our analysis, we present some preliminary observations here.
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ژورنال
عنوان ژورنال: Philologus
سال: 1882
ISSN: 2196-7008,0031-7985
DOI: 10.1524/phil.1882.41.14.544